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| LL5711 and LL6263 VRRM : 70V , 60V FEATURES : * For general purpose applications * Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. * This diode is also available in the DO-35 case with type designation 1N5711 and 1N6263. * Pb / RoHS Free SCHOTTKY BARRIER DIODES MiniMELF (SOD-80C) Cathode Mark 0.063 (1.64) 0.055 (1.40) 0.019(0.48) 0.011(0.28) 0.142(3.6) 0.134(3.4) Mounting Pad Layout 0.098 (2.50) Max. 0.049 (1.25)Min. 0.079 (2.00)Min. MECHANICAL DATA : Case: MiniMELF Glass Case (SOD-80C) Weight: approx. 0.05g 0.197 (5.00) REF Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at Parameter Repetitive Peak Reverse Voltage Power Dissipation (Infinite Heatsink) Maximum Single Cycle Surge 10 s Square Wave Junction Temperature Storage temperature range LL5711 LL6263 25 C ambient temperature unless otherwise specified.) Symbol VRRM PD IFSM TJ TS Value 70 60 400(1) 2.0 125 (1) Unit V mW A C C -55 to + 150 (1) Electrical Characteristics (TJ = 25C unless otherwise noted) Parameter Reverse Breakdown Voltage Reverse Current Forward Voltage Drop Diode Capacitance Reverse Recovery Time LL5711 LL6263 LL5711 LL6263 Symbol V(BR)R IR VF Cd Trr Test Condition IR = 10 A VR = 50 V IF = 1mA IF = 15mA VR = 0 V, f = 1MHz IF = IR = 5mA, recover to 0.1IR Min 70 60 - Typ - Max 200 0.41 1.0 2.0 2.2 1.0 Unit V nA V pF ns Note: (1) Valid provided that electrodes are kept at ambient temperature Page 1 of 2 Rev. 02 : March 24, 2005 RATING AND CHARACTERISTIC CURVES ( LL5711 and LL6263 ) Typical variation of forward current and forward voltage for primary conduction through the schottky barrier 10 5 Forward Current , IF (mA) 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0 0.5 Forward Voltage , VF (V) 1 0 0 0.5 Forward Voltage , VF (V) 1 Forward Current , IF (mA) 80 100 Typical forward conduction curve of combination schottky barrier and PN junction guard ring 60 40 20 Typical capacitance curve as a function of reverse voltage Typical variation of reverse current at various temperatures 2 Tj = 25C 100 50 20 Diode Capacitance , Cd (pF) Reverse Current , IR (A) 10 5 2 1 0.5 0.2 0.1 0.05 0.02 Ta = 125C 1 Ta = 25C 0 0 10 20 30 40 50 Reverse Voltage , VR (V) 0.01 0 10 20 30 40 50 Reverse Voltage , VR (V) Page 2 of 2 Rev. 02 : March 24, 2005 |
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